ON SEMICONDUCTOR NTJD1155LT1G 场效应管, MOSFET, P沟道, -8V, SC-88
双 N/P 通道 MOSFET,
### MOSFET ,ON Semiconductor
得捷:
MOSFET N/P-CH 8V 1.3A SOT363
欧时:
ON Semiconductor 双 Si N/P沟道 MOSFET NTJD1155LT1G, 1.3 A, Vds=8 V, 6引脚 SOT-363 SC-88封装
贸泽:
MOSFET 8V +/-1.3A P-Channel w/Level Shift
e络盟:
双路场效应管, MOSFET, 互补N与P沟道, 8 V, 1.3 A, 0.13 ohm, SC-88, 表面安装
艾睿:
If you need to either amplify or switch between signals in your design, then ON Semiconductor&s;s NTJD1155LT1G power MOSFET is for you. Its maximum power dissipation is 400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N/P-CH 8V 6-Pin SC-88 T/R
Chip1Stop:
Trans MOSFET N/P-CH 8V 6-Pin SC-88 T/R
TME:
IC: power switch; high-side switch; 1.3A; Channels:1; P-Channel
Verical:
Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R
Newark:
# ON SEMICONDUCTOR NTJD1155LT1G MOSFET Transistor, P Channel, 1.3 A, -8 V, 175 mohm, -4.5 V, 1 V
力源芯城:
-8V,-1.3A功率MOSFET
Win Source:
MOSFET N/P-CH 8V 1.3A SOT-363
DeviceMart:
MOSFET N+P 8V 1.3A SOT-363
额定电流 630 mA
输出接口数 1
输出电流 1 A
通道数 2
针脚数 6
漏源极电阻 0.175 Ω
极性 P-Channel
耗散功率 400 mW
阈值电压 1 V
漏源极电压Vds 8 V
栅源击穿电压 1.00 V
连续漏极电流Ids 1.30 A
输入电压Min 1.8 V
输出电流Min 1 A
额定功率Max 400 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 400 mW
输入电压 8 V
安装方式 Surface Mount
引脚数 6
封装 SC-88-6
长度 2.2 mm
宽度 1.25 mm
高度 1 mm
封装 SC-88-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, 工业, 便携式器材
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTJD1155LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTJD1155LT1 安森美 | 类似代替 | NTJD1155LT1G和NTJD1155LT1的区别 |
NTLJD2105LTBG 安森美 | 功能相似 | NTJD1155LT1G和NTLJD2105LTBG的区别 |