MJE3055T

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MJE3055T概述

STMICROELECTRONICS  MJE3055T  单晶体管 双极, NPN, 60 V, 2 MHz, 75 W, 3 A, 400 hFE

NPN 功率,STMicroelectronics


欧时:
STMicroelectronics MJE3055T , NPN 晶体管, 10 A, Vce=60 V, HFE:5, 2 MHz, 3引脚 TO-220封装


得捷:
TRANS NPN 60V 10A TO220


立创商城:
NPN 60V 10A


艾睿:
Trans GP BJT NPN 60V 10A 75000mW 3-Pin3+Tab TO-220AB Tube


安富利:
Trans GP BJT NPN 60V 10A 3-Pin3+Tab TO-220 Tube


Chip1Stop:
Trans GP BJT NPN 60V 10A 75000mW 3-Pin3+Tab TO-220 Tube


TME:
Transistor: NPN; bipolar; 70V; 10A; 90W; TO220AB


Verical:
Trans GP BJT NPN 60V 10A 75000mW 3-Pin3+Tab TO-220AB Tube


Newark:
Bipolar BJT Single Transistor, NPN, 60 V, 2 MHz, 75 W, 3 A, 400


力源芯城:
60V,10A,NPN功率晶体管


Win Source:
TRANS NPN 60V 10A TO-220


MJE3055T中文资料参数规格
技术参数

频率 2 MHz

额定电压DC 60.0 V

额定电流 10.0 A

针脚数 3

极性 NPN

耗散功率 75 W

击穿电压集电极-发射极 60 V

最小电流放大倍数hFE 20 @4A, 4V

最大电流放大倍数hFE 70

额定功率Max 75 W

直流电流增益hFE 400

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 75000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.4 mm

宽度 4.6 mm

高度 9.15 mm

封装 TO-220-3

物理参数

材质 Silicon

工作温度 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

制造应用 Industrial, 工业

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2014/06/16

数据手册

MJE3055T引脚图与封装图
MJE3055T引脚图
MJE3055T封装图
MJE3055T封装焊盘图
在线购买MJE3055T
型号: MJE3055T
制造商: ST Microelectronics 意法半导体
描述:STMICROELECTRONICS  MJE3055T  单晶体管 双极, NPN, 60 V, 2 MHz, 75 W, 3 A, 400 hFE
替代型号MJE3055T
型号/品牌 代替类型 替代型号对比

MJE3055T

ST Microelectronics 意法半导体

当前型号

当前型号

BD910

意法半导体

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