P 通道功率 MOSFET,30V 至 500V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
P 通道功率 MOSFET,30V 至 500V,
### MOSFET ,ON Semiconductor
得捷:
MOSFET P-CH 30V 2.2A SOT23-3
欧时:
### P 通道功率 MOSFET,30V 至 500V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
立创商城:
NTR4171PT1G
e络盟:
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.05 ohm, -10 V, -1.15 V
艾睿:
Use ON Semiconductor&s;s NTR4171PT1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTR4171PT1G P-channel MOSFET Transistor, 3.5 A, 30 V, 3-Pin SOT-23
安富利:
Trans MOSFET P-CH 30V 3.5A 3-Pin SOT-23 T/R
Chip1Stop:
Trans MOSFET P-CH 30V 3.5A 3-Pin SOT-23 T/R
TME:
Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23-3
Verical:
Trans MOSFET P-CH 30V 2.2A 3-Pin SOT-23 T/R
Newark:
# ON SEMICONDUCTOR NTR4171PT1G MOSFET Transistor, P Channel, -3.5 A, -30 V, 50 mohm, -10 V, -1.15 V
力源芯城:
-3.5A,-30V,P沟道MOSFET
Win Source:
MOSFET P-CH 30V 2.2A SOT23
通道数 1
针脚数 3
漏源极电阻 0.05 Ω
极性 P-Channel
耗散功率 1.25 W
阈值电压 1.15 V
漏源极电压Vds 30 V
连续漏极电流Ids 3.50 A, -2.20 A
上升时间 16 ns
输入电容Ciss 720pF @15VVds
额定功率Max 480 mW
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 480mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.04 mm
宽度 1.3 mm
高度 1.01 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 多媒体, 工业, Industrial, 便携式器材, Multimedia, Portable Devices, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTR4171PT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTR4171PT3G 安森美 | 类似代替 | NTR4171PT1G和NTR4171PT3G的区别 |
DMP3130L-7 美台 | 功能相似 | NTR4171PT1G和DMP3130L-7的区别 |
IRLML5203TRPBF 国际整流器 | 功能相似 | NTR4171PT1G和IRLML5203TRPBF的区别 |