BSI058R5110FR26

BSI058R5110FR26概述

Res Wirewound 0.511Ω 1% 1W ±300ppm/℃ Molded AXL Thru-Hole T/R

* 1 W to 10 W * Excellent stability = Typical drift ± 1 % after 2000 h * High power = Up to 10 W 25 °C * Low ohmic values = 0.01  available * Electrical insulation * Climatic protection


安富利:
Res Wirewound 0.511 Ohm 1% 1W ±300ppm/°C Molded AXL Thru-Hole T/R


BSI058R5110FR26中文资料参数规格
技术参数

额定功率 1 W

电阻 511 MΩ

物理参数

工作温度 -55℃ ~ 275℃

温度系数 ±300 ppm/℃

数据手册

在线购买BSI058R5110FR26
型号: BSI058R5110FR26
制造商: Vishay Semiconductor 威世
描述:Res Wirewound 0.511Ω 1% 1W ±300ppm/℃ Molded AXL Thru-Hole T/R

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