AT93C66B-SSHM-T

AT93C66B-SSHM-T概述

4-Kbit512 x 8bit or 256 x 16bit,SPI接口,工作电压:1.7V to 5.5V

The is a MICROWIRE-compatible 4kB 3-wire serial Electrically Erasable Programmable Read-Only Memory EEPROM organized as 512 words of 16-bit each when the ORG pin is connected to VCC and 256 words of 8-bit each when the ORG pin is tied to ground. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The AT93C66B is enabled through the chip select pin CS and accessed via a 3-wire serial interface consisting of data input DI, data output DO and shift clock SK. Upon receiving a read instruction at DI, the address is decoded and the data is clocked out serially on the DO pin. The write cycle is completely self-timed and no separate erase cycle is required before write. The write cycle is only enabled when the part is in the erase/write enable state. When CS is brought high following the initiation of a write cycle, the DO pin outputs the ready/busy status of the part.

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Low-voltage operation
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User-selectable internal organization
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Sequential read operation
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2MHz Clock rate 5V
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Self-timed write cycle 5ms maximum
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High reliability
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Endurance - 1000000 write cycles
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Data retention - 100 years
AT93C66B-SSHM-T中文资料参数规格

数据手册

在线购买AT93C66B-SSHM-T
型号: AT93C66B-SSHM-T
制造商: Microchip 微芯
描述:4-Kbit512 x 8bit or 256 x 16bit,SPI接口,工作电压:1.7V to 5.5V
替代型号AT93C66B-SSHM-T
型号/品牌 代替类型 替代型号对比

AT93C66B-SSHM-T

Microchip 微芯

当前型号

当前型号

AT93C66B-SSHM-B

微芯

完全替代

AT93C66B-SSHM-T和AT93C66B-SSHM-B的区别

CAT93C66VI-GT3

安森美

功能相似

AT93C66B-SSHM-T和CAT93C66VI-GT3的区别

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