ANALOG DEVICES HMC414MS8GE. 芯片, INGAP HBT功率放大器, SMT 2.2 - 2.8 GHZ
射频放大器,Analog Devices Hittite
Analog Devices Hittite 具有一系列射频放大器,它们具有各种功能。 一些具有低噪声放大器,一些射频放大器可与共振器、负电阻设备、变容二极管和缓冲器放大器集成,而另外一些可提供高效率 GaAs InGaP 异质结双极性晶体管 HBT MMIC 驱动器放大器。
得捷:
IC AMP BLE 2.2-2.8GHZ 8MSOP
欧时:
Analog Devices Hittite 系列 功率 RF 放大器 HMC414MS8GE, 20 dB功率增益, 最高2.8 GHz, 8引脚 MSOP封装
艾睿:
Never worry about lost data from your RF signal again, use this power amplifier HMC414MS8GE buffer amplifier from Analog Devices. Its maximum power dissipation is 1755 mW. This RF amplifier chip has a temperature range of -40 °C to 85 °C. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a single channel per chip. This device uses a single power supply.
安富利:
RF Amp Chip Single Power Amplifier 2800MHz 5V 8-Pin MSOP Bulk
Chip1Stop:
RF Amp Single Power Amp 2.8GHz 5V 8-Pin MSOP EP T/R
Verical:
RF Amp Chip Single Power Amp 2.8GHz 5V 8-Pin MSOP T/R
Newark:
# ANALOG DEVICES HMC414MS8GE RF Amplifier IC, 20 dB Gain / 7 dB Noise, 2.2 GHz to 2.8 GHz, 2.75 V to 5 V, HMSOP-8
DeviceMart:
IC PWR AMP 2.1-3.2GHZ 8-MSOP
Win Source:
IC AMP BLUETOOTH 2.2-2.8GHZ 8SMD / RF Amplifier IC Bluetooth 2.2GHz ~ 2.8GHz 8-MSOP-EP
频率 2.2GHz ~ 2.8GHz
电源电压DC 2.75V min
供电电流 300 mA
通道数 1
针脚数 8
耗散功率 1755 mW
输出功率 27 dBm
增益 20 dB
工作温度Max 85 ℃
工作温度Min -40 ℃
耗散功率Max 1755 mW
电源电压 2.75V ~ 5V
电源电压Max 5 V
电源电压Min 2.75 V
安装方式 Surface Mount
引脚数 8
封装 MSOP-8
长度 3.1 mm
宽度 3.1 mm
高度 0.95 mm
封装 MSOP-8
工作温度 -40℃ ~ 85℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Aerospace and Defense, Radar
RoHS标准 RoHS Compliant
含铅标准 Contains Lead
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
HMC414MS8GE ADI 亚德诺 | 当前型号 | 当前型号 |
HMC414MS8GETR 亚德诺 | 完全替代 | HMC414MS8GE和HMC414MS8GETR的区别 |
HMC414MS8G 亚德诺 | 类似代替 | HMC414MS8GE和HMC414MS8G的区别 |
HMC608LC4 亚德诺 | 功能相似 | HMC414MS8GE和HMC608LC4的区别 |