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N 通道功率 MOSFET,30V,
得捷:
MOSFET N-CH 30V 8.6A/59A 5DFN
欧时:
ON Semiconductor Si N沟道 MOSFET NTMFS4841NHT1G, 59 A, Vds=30 V, 8引脚 SO-8FL封装
立创商城:
NTMFS4841NHT1G
贸泽:
MOSFET NFET S08FL 30V 57A 7mOhm
e络盟:
晶体管, MOSFET, N沟道, 59 A, 30 V, 0.0048 ohm, 10 V, 2.1 V
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the NTMFS4841NHT1G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 5700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTMFS4841NHT1G N-channel MOSFET Transistor, 59 A, 30 V, 8-Pin SO-8FL
安富利:
Trans MOSFET N-CH 30V 21.8A 8-Pin SO-FL T/R
Verical:
Trans MOSFET N-CH 30V 13.5A 5-Pin4+Tab SO-FL T/R
Newark:
MOSFET Transistor, N Channel, 59 A, 30 V, 4.8 mohm, 10 V, 2.1 V
力源芯城:
30V,59A功率MOSFET
Win Source:
MOSFET N-CH 30V 8.6A SO-8FL
DeviceMart:
MOSFET N-CH 30V 8.6A SO-8FL
针脚数 5
漏源极电阻 4.8 mΩ
极性 N-Channel
耗散功率 41.7 W
阈值电压 2.1 V
输入电容 1565 pF
漏源极电压Vds 30 V
连续漏极电流Ids 59.0 A, 13.5 A
上升时间 20.6 ns
输入电容Ciss 2113pF @12VVds
额定功率Max 870 mW
下降时间 2.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 870mW Ta, 41.7W Tc
安装方式 Surface Mount
引脚数 5
封装 SO-FL-8
长度 5.1 mm
宽度 6.1 mm
高度 1.1 mm
封装 SO-FL-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
NTMFS4841NHT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTMFS4841NHT3G 安森美 | 功能相似 | NTMFS4841NHT1G和NTMFS4841NHT3G的区别 |