ON SEMICONDUCTOR NTD5865NLT4G 晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
N 通道功率 MOSFET,60V,
得捷:
MOSFET N-CH 60V 46A DPAK
欧时:
ON Semiconductor Si N沟道 MOSFET NTD5865NLT4G, 40 A, Vds=60 V, 3引脚 DPAK TO-252封装
立创商城:
N沟道 60V 46A
艾睿:
Increase the current or voltage in your circuit with this NTD5865NLT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 71000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
NTD5865NLT4G N-channel MOSFET Transistor, 40 A, 60 V, 3-Pin DPAK
安富利:
Trans MOSFET N-CH 60V 46A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET N-CH 60V 46A 3-Pin2+Tab DPAK T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 46A; 71W; DPAK
Verical:
Trans MOSFET N-CH 60V 46A 3-Pin2+Tab DPAK T/R
Newark:
# ON SEMICONDUCTOR NTD5865NLT4G MOSFET Transistor, N Channel, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
力源芯城:
60V,34A,N沟道MOSFET
DeviceMart:
MOSFET N-CH 60V 40A 16MOHM DPAK
Win Source:
MOSFET N-CH 60V 46A DPAK
针脚数 3
漏源极电阻 0.013 Ω
极性 N-Channel
耗散功率 52 W
阈值电压 1 V
输入电容 1.4 nF
漏源极电压Vds 60 V
上升时间 12.4 ns
输入电容Ciss 1400pF @25VVds
额定功率Max 52 W
下降时间 4.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 71W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2016/06/20
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTD5865NLT4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NVD5865NLT4G 安森美 | 类似代替 | NTD5865NLT4G和NVD5865NLT4G的区别 |
NTD5865NT4G 安森美 | 类似代替 | NTD5865NLT4G和NTD5865NT4G的区别 |
IRFU3806PBF 英飞凌 | 功能相似 | NTD5865NLT4G和IRFU3806PBF的区别 |