N 通道功率 MOSFET,30V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
N 通道功率 MOSFET,30V,
### MOSFET ,ON Semiconductor
得捷:
MOSFET N-CH 30V 16A/156A 5DFN
立创商城:
N沟道 30V 191A
欧时:
ON Semiconductor Si N沟道 MOSFET NTMFS4833NT3G, 191 A, Vds=30 V, 8引脚 SO-8FL封装
贸泽:
MOSFET NFET 30V 191A 2MOHM
艾睿:
This NTMFS4833NT3G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTMFS4833NT3G N-channel MOSFET Transistor, 191 A, 30 V, 8-Pin SO-8FL
安富利:
Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R
Chip1Stop:
Trans MOSFET N-CH 30V 28A 5-Pin4+Tab SO-FL T/R
Verical:
Trans MOSFET N-CH 30V 28A 5-Pin4+Tab SO-FL T/R
Newark:
# ON SEMICONDUCTOR NTMFS4833NT3G MOSFET Transistor, N Channel, 191 A, 30 V, 2 mohm, 10 V, 1.5 V
力源芯城:
30V,191A功率MOSFET
DeviceMart:
MOSFET N-CH 30V 16A SO-8FL
通道数 1
漏源极电阻 0.002 Ω
极性 N-Channel
耗散功率 125 W
阈值电压 1.5 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 191 A
上升时间 34 ns
输入电容Ciss 5600pF @12VVds
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 910mW Ta, 125W Tc
安装方式 Surface Mount
引脚数 5
封装 SO-FL-8
长度 5.1 mm
宽度 5.8 mm
高度 1.1 mm
封装 SO-FL-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTMFS4833NT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTMFS4833NT1G 安森美 | 类似代替 | NTMFS4833NT3G和NTMFS4833NT1G的区别 |