ON SEMICONDUCTOR NTD2955T4G 晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
P 通道功率 MOSFET,30V 至 500V,
### MOSFET ,ON Semiconductor
立创商城:
NTD2955T4G
得捷:
MOSFET P-CH 60V 12A DPAK
欧时:
ON Semiconductor Si P沟道 MOSFET NTD2955T4G, 12 A, Vds=60 V, 3引脚 DPAK TO-252封装
艾睿:
Make an effective common source amplifier using this NTD2955T4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 55000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
Allied Electronics:
NTD2955T4G P-channel MOSFET Transistor; 12 A; 60 V; 3-Pin DPAK
Jameco:
Transistor MOSFET P-Channel 60 Volt 12A 3-Pin2+Tab DPAK
安富利:
Trans MOSFET P-CH 60V 12A 3-Pin2+Tab DPAK T/R
Chip1Stop:
Trans MOSFET P-CH 60V 12A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET P-CH 60V 12A 3-Pin2+Tab DPAK T/R
Newark:
MOSFET Transistor, P Channel, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
力源芯城:
-60V,-12A功率MOSFET
Win Source:
MOSFET P-CH 60V 12A DPAK
额定电压DC -60.0 V
额定电流 -12.0 A
通道数 1
针脚数 4
漏源极电阻 0.155 Ω
极性 P-Channel
耗散功率 55 W
阈值电压 2.8 V
输入电容 500 pF
漏源极电压Vds 60 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 12.0 A, 12.0 mA
上升时间 45 ns
输入电容Ciss 750pF @25VVds
额定功率Max 55 W
下降时间 48 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 55 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Power Management, Motor Drive & Control, 电机驱动与控制, 电源管理, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTD2955T4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTD2955-1G 安森美 | 类似代替 | NTD2955T4G和NTD2955-1G的区别 |
NTD2955G 安森美 | 类似代替 | NTD2955T4G和NTD2955G的区别 |
NTD2955PT4G 安森美 | 类似代替 | NTD2955T4G和NTD2955PT4G的区别 |