BCW66HTA 编带
是一款NPN硅平面中等功率双极, 75V集电极-基极电压, 800mA连续集电极电流。
得捷:
TRANS NPN 45V 0.8A SOT23-3
立创商城:
NPN 45V 800mA
e络盟:
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE
艾睿:
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN BCW66HTA general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
Allied Electronics:
Transistor NPN 0.8A 45V 250hfe SOT23
安富利:
Trans GP BJT NPN 45V 0.8A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT NPN 45V 0.8A 3-Pin SOT-23 T/R
TME:
Transistor: NPN; bipolar; 45V; 800mA; 330mW; SOT23
Verical:
Trans GP BJT NPN 45V 0.8A Automotive 3-Pin SOT-23 T/R
Newark:
# DIODES INC. BCW66HTA Bipolar BJT Single Transistor, General Purpose, NPN, 45 V, 100 MHz, 330 mW, 500 mA, 350 hFE
Win Source:
TRANS NPN 45V 0.8A SOT23-3
频率 100 MHz
额定电压DC 45.0 V
额定电流 800 mA
额定功率 0.3333333333333333 W
针脚数 3
极性 NPN
耗散功率 330 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 250 @100mA, 1V
最大电流放大倍数hFE 180 @10mA, 1V
额定功率Max 330 mW
直流电流增益hFE 350
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BCW66HTA Diodes 美台 | 当前型号 | 当前型号 |
BC817-40-7-F 美台 | 类似代替 | BCW66HTA和BC817-40-7-F的区别 |
BC817-16-TP 美微科 | 功能相似 | BCW66HTA和BC817-16-TP的区别 |
BCW66H Central Semiconductor | 功能相似 | BCW66HTA和BCW66H的区别 |