NSBC123JPDXV6T1G

NSBC123JPDXV6T1G NPN+PNP复合带阻尼三极管 -50V/50V -100mA/100mA HEF=80~140 R1=2.2KΩ R2=47KΩ 500mW/0.5W SOT-563 标记3S6 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | -50V/50V

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集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | -50V/50V

集电极连续输出电流IC Collector CurrentIC | -100mA/100mA

Q1基极输入电阻R1 Input ResistanceR1 | 2.2KΩ/Ohm

Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm

Q1电阻比R1/R2 Q1 Resistance Ratio | 0.047

Q2基极输入电阻R1 Input ResistanceR1 | 2.2KΩ/Ohm

Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm

Q2电阻比R1/R2 Q2 Resistance Ratio | 0.047

直流电流增益hFE DC Current GainhFE | 80~140

截止频率fT Transtion FrequencyfT |

耗散功率Pc Power Dissipation | 500mW/0.5W

Description & Applications | Features •Dual Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7 inch Tape and Reel •AEC−Q101 Qualified and PPAP Capable •NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements •These are Pb−Free Devices

描述与应用 | 特点 •双偏置电阻 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数 •8毫米，7英寸磁带和卷轴 •通过AEC-Q101认证和PPAP能力 •的NSV前缀为汽车和其他应用程序需要独特的网站和控制变更要求 •这些都是Pb-Free设备