FX504 NPN+NPN复合三极管 60V 3A 140~400 XP6 标记504 用于开关/数字电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 60V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 3A Q1基极输入电阻R1 Input ResistanceR1| 170MHz Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 140~400 Q1电阻比R1/R2 Q1 Resistance Ratio| 190mV Q2基极输入电阻R1 Input ResistanceR1| 2000mW Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| Features • PNP Epitaxial Planar Silicon Transistor • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The houses two chips, each being equivalent to the 2SD1802, in one package. • Matched pair characteristics. • High-Current Switching Applications Q2电阻比R1/R2 Q2 Resistance Ratio| 特点 •PNP外延平面硅晶体管 •在一个封装中包含2个NPN晶体管，促进高密度安装复合型。 •FX504的房子，每个被相当于两个芯片2SD1802，在一个包装。 •配对特性。 •高电流开关应用 直流电流增益hFE DC Current GainhFE| 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| Description & Applications| 描述与应用|
封装 XP-6
封装 XP-6
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO 60V
集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO 50V
集电极连续输出电流IC Collector CurrentIC 3A
Q1基极输入电阻R1 Input ResistanceR1 170MHz
Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 140~400
Q1电阻比R1/R2 Q1 Resistance Ratio 190mV
Q2基极输入电阻R1 Input ResistanceR1 2000mW
Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 Features • PNP Epitaxial Planar Silicon Transistor • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The FX504 houses two chips, each being equivalent to the 2SD1802, in one package. • Matched pair characteristics. • High-Current Switching Applications
Q2电阻比R1/R2 Q2 Resistance Ratio 特点 •PNP外延平面硅晶体管 •在一个封装中包含2个NPN晶体管，促进高密度安装复合型。 •FX504的房子，每个被相当于两个芯片2SD1802，在一个包装。 •配对特性。 •高电流开关应用
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