NXP PBSS4041SPN,115 双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 500 hFE, SOIC
The is a NPN-PNP breakthrough-in small signal BISS Bipolar Transistor Array in a medium power surface-mount plastic package. It is suitable for use in battery-driven devices, charging circuits, load-switch and power switches. It utilizes required smaller printed-circuit board PCB area than for conventional transistors.
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- Very low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- PBSS4041SP dual PNP complement
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- PBSS4041SN dual NPN complement
针脚数 8
极性 NPN, PNP
耗散功率 2.3 W
击穿电压集电极-发射极 60 V
集电极最大允许电流 6.7A/5.9A
最小电流放大倍数hFE 300
额定功率Max 2.3 W
直流电流增益hFE 500
工作温度Max 150 ℃
耗散功率Max 2300 mW
安装方式 Surface Mount
引脚数 8
封装 SOT-96-1
封装 SOT-96-1
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Industrial, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PBSS4041SPN,115 NXP 恩智浦 | 当前型号 | 当前型号 |
PBSS4041SPN 恩智浦 | 功能相似 | PBSS4041SPN,115和PBSS4041SPN的区别 |