S34ML04G1 系列 4 Gb 512M x 8 3 V 表面贴装 嵌入式 NAND 闪存 - BGA-63
The is a 4GB SLC NAND Flash Memory for embedded. It is offered in 3.3VCC and VCCQ power supply and with x8 or x16 I/O interface. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 is bytes for x16 1024 + 32 words. Each block can be programmed and erased up to 100000 cycles with ECC error correction code on. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don"t care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation. The device has a read cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.
电源电压DC 2.70V min
供电电流 30 mA
针脚数 63
存取时间 25 ns
存取时间Max 20 ns
工作温度Max 85 ℃
工作温度Min -40 ℃
电源电压 3.3 V
电源电压Max 3.6 V
电源电压Min 2.7 V
安装方式 Surface Mount
引脚数 63
封装 BGA-63
封装 BGA-63
工作温度 -40℃ ~ 85℃
产品生命周期 Unknown
包装方式 Tray
制造应用 工业, 车用, 通信与网络, Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics, , 消费电子产品, 计算机和计算机周边
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
S34ML04G100BHI000 Cypress Semiconductor 赛普拉斯 | 当前型号 | 当前型号 |
S34ML04G100BHI003 赛普拉斯 | 完全替代 | S34ML04G100BHI000和S34ML04G100BHI003的区别 |
S34ML04G100TFI003 赛普拉斯 | 类似代替 | S34ML04G100BHI000和S34ML04G100TFI003的区别 |
S34ML04G100TFI000 赛普拉斯 | 功能相似 | S34ML04G100BHI000和S34ML04G100TFI000的区别 |