JANS2N2222A

每NPN型硅开关晶体管合格MIL -PRF- 255分之19500 NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

Bipolar BJT Transistor NPN 50V 800mA 500mW Through Hole TO-18 TO-206AA

贸泽:
Bipolar Transistors - BJT Small-Signal BJT

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANS2N2222A GP BJT from Microsemi. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT NPN 50V 0.8A 3-Pin TO-18

Verical:
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Tray