FP106 PNP+PNP复合三极管 -15V -3A 100~280 PCP4 标记106 用于开关/数字电路
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| -15V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| -15V 集电极连续输出电流IC Collector CurrentIC| -3A Q1基极输入电阻R1 Input ResistanceR1| 300MHz Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 100~280 Q1电阻比R1/R2 Q1 Resistance Ratio| -250mV Q2基极输入电阻R1 Input ResistanceR1| 1300mW Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2| Features •PNP Epitaxial Planar Silicon Transistor •Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. •The is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB10-05C •DC-DC Converter Applications Q2电阻比R1/R2 Q2 Resistance Ratio| 特点 •PNP外延平面硅晶体管 •PNP晶体管和肖特基势垒二极管在一个包中，便于高密度安装的复杂类型。 •FP1062芯片组成，其中之一是相当于2SA1898情况SB10-05C的 •DC-DC转换器应用 直流电流增益hFE DC Current GainhFE| 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| Description & Applications| 描述与应用|
封装 PCP-4
封装 PCP-4
集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO -15V
集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO -15V
集电极连续输出电流IC Collector CurrentIC -3A
Q1基极输入电阻R1 Input ResistanceR1 300MHz
Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 100~280
Q1电阻比R1/R2 Q1 Resistance Ratio -250mV
Q2基极输入电阻R1 Input ResistanceR1 1300mW
Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 Features •PNP Epitaxial Planar Silicon Transistor •Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. •The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB10-05C •DC-DC Converter Applications
Q2电阻比R1/R2 Q2 Resistance Ratio 特点 •PNP外延平面硅晶体管 •PNP晶体管和肖特基势垒二极管在一个包中，便于高密度安装的复杂类型。 •FP1062芯片组成，其中之一是相当于2SA1898情况SB10-05C的 •DC-DC转换器应用
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