TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV
Switching Regulator Applications
• Low drain-source ON resistance: RDS ON= 1.35 Ωtyp.
• High forward transfer admittance: |Yfs| = 5.2 S typ.
• Low leakage current: IDSS= 100 μA max VDS= 640 V
• Enhancement model: Vth= 2.0 to 4.0 V VDS= 10 V, ID= 1 mA