ON SEMICONDUCTOR NVD5117PLT4G 场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3
The is a -60V Single P-channel Power MOSFET features low RDS on to minimize conduction losses and high current capability.
得捷:
MOSFET P-CH 60V 11A/61A DPAK
立创商城:
NVD5117PLT4G
贸泽:
MOSFET 60V T1 PCH DPAK
e络盟:
晶体管, MOSFET, P沟道, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V
艾睿:
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NVD5117PLT4G power MOSFET. Its maximum power dissipation is 4100 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
安富利:
Trans MOSFET P-CH 60V 11A Automotive 3-Pin2+Tab DPAK T/R
富昌:
P-沟道 60 V 16 mOhm 85 nC 表面贴装 Mosfet - DPAK-3
Chip1Stop:
Trans MOSFET P-CH 60V 11A Automotive 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET P-CH 60V 11A Automotive 3-Pin2+Tab DPAK T/R
Newark:
# ON SEMICONDUCTOR NVD5117PLT4G MOSFET Transistor, P Channel, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V
力源芯城:
-61A,-60V,P沟道MOSFET
DeviceMart:
MOSFET P-CH 60V 61A DPAK
通道数 1
针脚数 3
漏源极电阻 0.016 Ω
极性 P-Channel
耗散功率 118 W
阈值电压 1.5 V
漏源极电压Vds 60 V
连续漏极电流Ids 11A
上升时间 195 ns
输入电容Ciss 4800pF @25VVds
额定功率Max 4.1 W
下降时间 132 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 4.1W Ta, 118W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 车用, Automotive
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NVD5117PLT4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SUD50P06-15-GE3 威世 | 功能相似 | NVD5117PLT4G和SUD50P06-15-GE3的区别 |