1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Functional Description
Applications
The GS8160xxBT-xxxV is an 18,874,368-bit 16,777,216-bit for x32 version high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect SCD operation
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write BW and/or Global Write GW operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available