NJVMJD117T4G

NJVMJD117T4G概述

达林顿晶体管 BIP PNP 2A 100V TR

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 NPN and MJD117 PNP are complementary devices.

Features

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Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
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Straight Lead Version in Plastic Sleeves "1" Suffix
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Lead Formed Version in 16 mm Tape and Reel "T4" Suffix
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Surface Mount Replacements for TIP110-TIP117 Series
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Monolithic Construction With Built-in Base-Emitter Shunt Resistors
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High DC Current Gain hFE = 2500 Typ @ IC = 2.0 Adc
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Complementary Pairs Simplifies Designs
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NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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PbFree Packages are Available
NJVMJD117T4G中文资料参数规格

数据手册

在线购买NJVMJD117T4G
型号: NJVMJD117T4G
制造商: ON Semiconductor 安森美
描述:达林顿晶体管 BIP PNP 2A 100V TR
替代型号NJVMJD117T4G
型号/品牌 代替类型 替代型号对比

NJVMJD117T4G

ON Semiconductor 安森美

当前型号

当前型号

MJD117TF

安森美

类似代替

NJVMJD117T4G和MJD117TF的区别

MJD117RLG

安森美

类似代替

NJVMJD117T4G和MJD117RLG的区别

MJD117T4G

安森美

功能相似

NJVMJD117T4G和MJD117T4G的区别

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