















ON SEMICONDUCTOR NTD6414ANT4G 晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
N 通道功率 MOSFET,100V 至 1700V,
得捷:
MOSFET N-CH 100V 32A DPAK
立创商城:
NTD6414ANT4G
欧时:
ON Semiconductor Si N沟道 MOSFET NTD6414ANT4G, 32 A, Vds=100 V, 3引脚 DPAK TO-252封装
贸泽:
MOSFET NFET DPAK 100V 34A 37MO
e络盟:
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.03 ohm, 10 V, 4 V
艾睿:
Create an effective common drain amplifier using this NTD6414ANT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 100000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTD6414ANT4G N-channel MOSFET Transistor, 32 A, 100 V, 3-Pin DPAK
安富利:
Trans MOSFET N-CH 100V 32A 3-Pin2+Tab DPAK T/R
Verical:
Trans MOSFET N-CH 100V 32A 3-Pin2+Tab DPAK T/R
Newark:
# ON SEMICONDUCTOR NTD6414ANT4G MOSFET Transistor, N Channel, 32 A, 100 V, 30 mohm, 10 V, 4 V
力源芯城:
32A,100V功率MOSFET
Win Source:
MOSFET N-CH 100V 32A DPAK
DeviceMart:
MOSFET N-CH 100V 32A DPAK
通道数 1
针脚数 3
漏源极电阻 30 mΩ
极性 N-Channel
耗散功率 100 W
阈值电压 4 V
漏源极电压Vds 100 V
连续漏极电流Ids 32.0 A
上升时间 52 ns
输入电容Ciss 1450pF @25VVds
额定功率Max 100 W
下降时间 48 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 100W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 工业, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2016/06/20
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
NTD6414ANT4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BUK9230-100B,118 恩智浦 | 功能相似 | NTD6414ANT4G和BUK9230-100B,118的区别 |