2SD1119-R

2SD1119-r NPN三极管 40V 3A 150MHz 340~600 1V SOT-89/SC-62 marking/标记 TR 低频功率放大

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 25V 集电极连续输出电流ICCollector CurrentIC| 3A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 230~380 管压降VCE（sat）Collector-Emitter Saturation Voltage| 1V 耗散功率PcPower Dissipation| 1W Description & Applications| Silicon NPN epitaxial planer type low-frequency power amplification Features

.

Low collector to emitter saturation voltage VCEsat * Satisfactory operation performances at high efficiency with the low-voltage power supply. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 描述与应用| NPN硅外延平面型  低频功率放大  特点 *低集电极到发射极饱和电压VCE（SAT） *高效率令人满意的操作性能 低电压电源。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 填料