2SD1030-S

2SD1030-S NPN三极管 50V 50mA 120MHz 600~1200 50mV SOT-23/SC-59 marking/标记 1ZS 低频放大

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 40V 集电极连续输出电流ICCollector CurrentIC| 50mA 截止频率fTTranstion FrequencyfT| 120MHz 直流电流增益hFEDC Current GainhFE| 600~1200 管压降VCE（sat）Collector-Emitter Saturation Voltage| 50mV 耗散功率PcPower Dissipation| 200mW/0.2W Description & Applications| Silicon NPN epitaxial planer type low-frequency amplification Features

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High foward current transfer ratio hFE. * Low collector to emitter saturation voltage VCEsat * High emitter to base voltage VEBO. * Low noise voltage NV. * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 描述与应用| NPN硅外延平面型  低频放大  特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE（SAT） *高发射器基极电压VEBO。 *低噪声电压NV。 *迷你型包装，使瘦身的设备和 通过自动插入磁带包装和杂志 包装。