FAIRCHILD SEMICONDUCTOR HUF75639P3.. 晶体管, MOSFET, N沟道, 56 A, 100 V, 21 mohm, 10 V, 4 V
The is a N-channel Power MOSFETs manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible ON-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, relay drivers, low-voltage bus switches and power management in battery operated products.
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- Peak current vs. pulse width curve
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- UIS Rating curve
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- Temperature compensated PSPICE®/SABER™ electrical, SPICE & SABER thermal impedance simulation models
额定电压DC 100 V
额定电流 56.0 A
额定功率 200 W
通道数 1
针脚数 3
漏源极电阻 0.025 Ω
极性 N-Channel
耗散功率 200 W
阈值电压 4 V
输入电容 2.00 nF
栅电荷 57.0 nC
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 56.0 A
上升时间 60 ns
输入电容Ciss 2000pF @25VVds
额定功率Max 200 W
下降时间 25 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 200000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
材质 Silicon
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
HUF75639P3 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRF3710PBF 英飞凌 | 功能相似 | HUF75639P3和IRF3710PBF的区别 |
STP40NF10 意法半导体 | 功能相似 | HUF75639P3和STP40NF10的区别 |
STP80NF12 意法半导体 | 功能相似 | HUF75639P3和STP80NF12的区别 |