2SD875-R NPN三极管 80V 500mA/0.5A 120MHz 130~220 200mV/0.2V SOT-89/SC-62 marking/标记 XR 低频功率放大
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 80V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 80V 集电极连续输出电流ICCollector CurrentIC| 500mA/0.5A 截止频率fTTranstion FrequencyfT| 120MHz 直流电流增益hFEDC Current GainhFE| 130~220 管压降VCE(sat)Collector-Emitter Saturation Voltage| 200mV/0.2V 耗散功率PcPower Dissipation| 1W Description & Applications| Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 描述与应用| NPN硅外延平面型 对于低频功率放大互补2SB767 特点 大集电极功耗PC。 高集电极发射极电压VCEO。 迷你功率型封装 通过自动插入带包装盒包装。
封装 SOT-89
封装 SOT-89
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO 80V
集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO 80V
集电极连续输出电流ICCollector CurrentIC 500mA/0.5A
截止频率fTTranstion FrequencyfT 120MHz
直流电流增益hFEDC Current GainhFE 130~220
管压降VCE(sat)Collector-Emitter Saturation Voltage 200mV/0.2V
耗散功率PcPower Dissipation 1W
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