2SD1620

2SD1620 NPN三极管 30V 3A 200MHz 140~210 300mV/0.3V SOT-89/PCP marking/标记 DC

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 30V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 20V 集电极连续输出电流ICCollector CurrentIC| 3A 截止频率fTTranstion FrequencyfT| 200MHz 直流电流增益hFEDC Current GainhFE| 140~210 管压降VCE（sat）Collector-Emitter Saturation Voltage| 300mV/0.3V 耗散功率PcPower Dissipation| 500mW/0.5W Description & Applications| NPN Epitaxial Planar Silicon Transistor 1.5V ，3V strobe application featrues

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large current capicity and high resistance to breakdown * less power dissipation because of low Vce ，permitting more flashes of light to be emitted * excellent linearity of hFE in the region from low current to high current * ultrasmall size supports high density ,ultrasmall sized hybird ic designs 描述与应用| NPN平面外延硅晶体管 1.5V，3V频闪应用 featrues *大电流容量为和高耐击穿 *功耗低，允许发出闪烁的光，因为低Vce *卓越的线性度在该地区低电流到大电流HFE *超小尺寸支持高密度，超小尺寸摄录IC设计