ON SEMICONDUCTOR NTMFS4852NT1G 场效应管, MOSFET, N沟道, 30V, 25A, SOIC
N-Channel 30V 16A Ta, 155A Tc 900mW Ta, 86.2W Tc Surface Mount 5-DFN 5x6 8-SOFL
得捷:
MOSFET N-CH 30V 16A/155A 5DFN
立创商城:
NTMFS4852NT1G
欧时:
### N 通道功率 MOSFET,30V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
贸泽:
MOSFET NFET SO8FL 30V 155A 2.1MO
e络盟:
场效应管, MOSFET, N沟道, 30V, 25A, SOIC
艾睿:
Compared to traditional transistors, NTMFS4852NT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 5950 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTMFS4852NT1G N-channel MOSFET Transistor, 40 A, 30 V, 8-Pin SO-8FL
安富利:
Trans MOSFET N-CH 30V 40A 8-Pin SO-FL T/R
Verical:
Trans MOSFET N-CH 30V 25A 5-Pin4+Tab SO-FL T/R
Newark:
# ON SEMICONDUCTOR NTMFS4852NT1G MOSFET Transistor, N Channel, 25 A, 30 V, 0.0016 ohm, 10 V, 1.8 V
力源芯城:
30V,-55A,N沟道MOSFET
Win Source:
MOSFET N-CH 30V 16A SO8FL
DeviceMart:
MOSFET N-CH 30V 16A SO8 FL
通道数 1
针脚数 8
漏源极电阻 0.0016 Ω
极性 N-Channel
耗散功率 86.2 W
阈值电压 1.8 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 40A
上升时间 25.6 ns
输入电容Ciss 4970pF @12VVds
额定功率Max 900 mW
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 900mW Ta, 86.2W Tc
安装方式 Surface Mount
引脚数 8
封装 SO-FL-8
长度 5.1 mm
宽度 6.1 mm
高度 1.1 mm
封装 SO-FL-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTMFS4852NT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTMFS4852NT3G 安森美 | 功能相似 | NTMFS4852NT1G和NTMFS4852NT3G的区别 |