功率MOSFET,30V,106A,2.1mΩ,单N沟道
N-Channel 30V 22A Ta, 106A Tc 1.7W Ta Surface Mount 5-DFN 5x6 8-SOFL
得捷:
MOSFET N-CH 30V 22A/106A 5DFN
立创商城:
N沟道 30V 106A
艾睿:
This NTMFS4983NFT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 7700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 30V 30A 8-Pin SO-FL T/R
Verical:
Trans MOSFET N-CH 30V 30A 5-Pin4+Tab SO-FL T/R
Newark:
# ON SEMICONDUCTOR NTMFS4983NFT1G MOSFET, N-CH, 30V, 30A, SO-8FL New
力源芯城:
功率MOSFET,30V,106A,2.1mΩ,单N沟道
Win Source:
MOSFET N-CH 30V 160A SO8FL
针脚数 8
漏源极电阻 0.0016 Ω
极性 N-Channel
耗散功率 3.13 W
阈值电压 1.7 V
漏源极电压Vds 30 V
连续漏极电流Ids 48A
上升时间 24.9 ns
输入电容Ciss 3250pF @15VVds
额定功率Max 1.7 W
下降时间 10.7 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.7W Ta, 38W Tc
安装方式 Surface Mount
引脚数 8
封装 SO-8
封装 SO-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 Lead Free
REACH SVHC版本 2016/06/20
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTMFS4983NFT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTMFS4983NFT3G 安森美 | 功能相似 | NTMFS4983NFT1G和NTMFS4983NFT3G的区别 |