N 通道功率 MOSFET,60V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
N 通道功率 MOSFET,60V,
得捷:
MOSFET N-CH 60V 220A D2PAK-3
欧时:
ON Semiconductor Si N沟道 MOSFET NVB5860NLT4G, 220 A, Vds=60 V, 3引脚 D2PAK TO-263封装
艾睿:
If you need to either amplify or switch between signals in your design, then ON Semiconductor&s;s NVB5860NLT4G power MOSFET is for you. Its maximum power dissipation is 283000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
Allied Electronics:
NVB5860NLT4G N-channel MOSFET Transistor, 220 A, 60 V, 3-Pin D2PAK
安富利:
Trans MOSFET N-CH 60V 220A 3-Pin D2PAK T/R
Verical:
Trans MOSFET N-CH 60V 220A Automotive 3-Pin2+Tab D2PAK T/R
Win Source:
MOSFET N-CH 60V 169A D2PAK
通道数 1
极性 N-CH
耗散功率 283 W
漏源极电压Vds 60 V
连续漏极电流Ids 220A
上升时间 58 ns
输入电容Ciss 13216pF @25VVds
下降时间 144 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 283W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.29 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NVB5860NLT4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
FDB024N06 安森美 | 类似代替 | NVB5860NLT4G和FDB024N06的区别 |
NVB5860NT4G 安森美 | 类似代替 | NVB5860NLT4G和NVB5860NT4G的区别 |
IRFS7530TRLPBF 英飞凌 | 功能相似 | NVB5860NLT4G和IRFS7530TRLPBF的区别 |