N 通道功率 MOSFET,40V,ON Semiconductor### MOSFET 晶体管,ON Semiconductor
N 通道功率 MOSFET,40V,
### MOSFET ,ON Semiconductor
得捷:
MOSFET N-CH 40V 20A/111A 5DFN
立创商城:
N沟道 40V 111A
欧时:
ON Semiconductor Si N沟道 MOSFET NTMFS5832NLT1G, 110 A, Vds=40 V, 8引脚 SO-8FL封装
贸泽:
MOSFET NFET SO8FL 40V 110A 4.2MO
艾睿:
Compared to traditional transistors, NTMFS5832NLT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Allied Electronics:
NTMFS5832NLT1G N-channel MOSFET Transistor, 110 A, 40 V, 8-Pin SO-8FL
安富利:
Trans MOSFET N-CH 40V 20A 8-Pin DFN EP T/R
Chip1Stop:
Trans MOSFET N-CH 40V 20A 5-Pin4+Tab SO-FL T/R
Verical:
Trans MOSFET N-CH 40V 20A 5-Pin4+Tab SO-FL T/R
Newark:
# ON SEMICONDUCTOR NTMFS5832NLT1G MOSFET Transistor, N Channel, 20 A, 40 V, 0.0031 ohm, 10 V, 3 V
力源芯城:
110A,40V,N沟道MOSFET
DeviceMart:
MOSFET N-CH 40V 110A SO-8FL
漏源极电阻 0.0031 Ω
极性 N-Channel
耗散功率 3.1 W
阈值电压 3 V
漏源极电压Vds 40 V
上升时间 24 ns
输入电容Ciss 2700pF @25VVds
额定功率Max 3.1 W
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.1W Ta, 96W Tc
安装方式 Surface Mount
引脚数 5
封装 SO-FL-8
长度 5.1 mm
宽度 6.1 mm
高度 1.1 mm
封装 SO-FL-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17