2SD1280GRL

2SD1280GRL NPN三极管 20V 1A 150MHz 130~210 500mV/0.5V SOT-89/SC-62 marking/标记 RR

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 20V 集电极连续输出电流ICCollector CurrentIC| 1A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 130~210 管压降VCE（sat）Collector-Emitter Saturation Voltage| 500mV/0.5V 耗散功率PcPower Dissipation| 1W Description & Applications| Silicon NPN epitaxial planer type low-voltage type medium output power amplification Features

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Low collector to emitter saturation voltage VCEsat *Satisfactory operation performances at high efficiency with the low-voltage power supply. *Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 描述与应用| NPN硅外延平面型  低电压型介质输出功率放大  特点 *低集电极到发射极饱和电压VCE（SAT） *高效率令人满意的操作性能  低电压电源。 *小功率型封装，允许缩减设备 通过自动插入带包装盒包装