ON SEMICONDUCTOR NTD4804NT4G MOSFET Transistor, N Channel, 19.6 A, 30 V, 3.4 mohm, 10 V, 2.5 V 新
N 通道功率 MOSFET,30V,
欧时:
ON Semiconductor Si N沟道 MOSFET NTD4804NT4G, 117 A, Vds=30 V, 3引脚 DPAK TO-252封装
得捷:
MOSFET N-CH 30V 14.5A/124A DPAK
立创商城:
N沟道 30V 14.5A
e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 19.6 A, 0.0034 ohm, TO-252 DPAK, 表面安装
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the NTD4804NT4G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 2660 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
Allied Electronics:
IC, Transistor; Mosfet, N-Channel; 30V; 14.5A; DPAK-3; Cut Tape
Verical:
Trans MOSFET N-CH 30V 19.6A 3-Pin2+Tab DPAK T/R
Newark:
# ON SEMICONDUCTOR NTD4804NT4G MOSFET Transistor, N Channel, 19.6 A, 30 V, 3.4 mohm, 10 V, 2.5 V
力源芯城:
30V,117A,N沟道MOSFET
Win Source:
MOSFET N-CH 30V 14.5A DPAK
DeviceMart:
MOSFET N-CH 30V 14.5A DPAK
针脚数 3
漏源极电阻 0.0034 Ω
极性 N-Channel
耗散功率 1.43 W
阈值电压 2.5 V
输入电容 4490pF @12V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 19.0 A, 117 A
输入电容Ciss 4490pF @12VVds
额定功率Max 1.43 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 1.43W Ta, 107W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2016/06/20
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTD4804NT4G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTD4904NT4G 安森美 | 类似代替 | NTD4804NT4G和NTD4904NT4G的区别 |
NTD4854NT4G 安森美 | 类似代替 | NTD4804NT4G和NTD4854NT4G的区别 |
NTD4904N-35G 安森美 | 功能相似 | NTD4804NT4G和NTD4904N-35G的区别 |