
MJD210-TF PNP三极管 -40V -5A 65MHz 45~180 -750mV/-0.75V TO-252/DPAK marking/标记 MJD210 高直流电流增益
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −25V 集电极连续输出电流ICCollector CurrentIC| -5A 截止频率fTTranstion FrequencyfT| 65MHz 直流电流增益hFEDC Current GainhFE| 45~180 管压降VCE(sat)Collector-Emitter SaturationVoltage| -750mV/-0.75V 耗散功率PcPoWer Dissipation| 1.4W Description & Applications| PNP epitaxial planar transistor D-PAK for Surface Mount Applications • High DC Current Gain Feature • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications • Straight Lead 描述与应用| PNP外延平面晶体管 D-PAK表面贴装应用 •高直流电流增益 特点 •低集电极发射极饱和电压 •铅形成表面贴装应用 •直铅
封装 TO-252
封装 TO-252
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO -40V
集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO −25V
集电极连续输出电流ICCollector CurrentIC -5A
截止频率fTTranstion FrequencyfT 65MHz
直流电流增益hFEDC Current GainhFE 45~180
管压降VCE(sat)Collector-Emitter SaturationVoltage -750mV/-0.75V
耗散功率PcPoWer Dissipation 1.4W
规格书PDF __
RoHS标准 RoHS Compliant
含铅标准 Lead Free