High voltage fast-switching NPN power transistor
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
Application
■ Switch mode power supplies AC-DC converters