BC847A NPN三极管 50V 100mA/0.1A 300MHz 110~220 200~600 mV SOT-23/SC-59 marking/标记 1E 通用开关和放大
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 50V
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集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 45V
集电极连续输出电流ICCollector CurrentIC| 100mA/0.1A
截止频率fTTranstion FrequencyfT| 300MHz
直流电流增益hFEDC Current GainhFE| 110~220
管压降VCE(sat)Collector-Emitter Saturation Voltage| 200~600 mV
耗散功率PcPower Dissipation| 310mW/0.31W
Description & Applications| Features • These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC846 is available in groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As complementary types, the PNP transistors BC856...BC859 are recommended. • NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits.
描述与应用| 特点 这些晶体管被细分为三组(A,B,和C),根据其电流增益。 BC846是不同的,在组A和B,然而,类型BC847和BC848可以提供在所有三个组。 BC849是一款低噪声型可在B和C组作为互补类型,PNP晶体管BC856... BC859建议。 •NPN硅外延平面晶体管开关和AF放大器应用。 •尤其适用于自动插入厚薄膜电路。
封装 SOT-23
封装 SOT-23
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO 50V
集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO 45V
集电极连续输出电流ICCollector CurrentIC 100mA/0.1A
截止频率fTTranstion FrequencyfT 300MHz
直流电流增益hFEDC Current GainhFE 110~220
管压降VCE(sat)Collector-Emitter Saturation Voltage 200~600 mV
耗散功率PcPower Dissipation 310mW/0.31W
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