ROHM QS6K1TR 双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
The is a dual N-channel Complex MOSFET designed as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. It is designed for coin processing machines, portable data terminal, handy and bench type digital multi-meter, PLC, DVR/DVS, POS, electric bike, smart meter, surveillance camera, X-ray inspection machine for security, surveillance camera for network, intercom/baby monitor, fingerprint authentication device, machine vision camera for industrial and display for EMS applications.
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- Low ON-resistance
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- Small and surface-mount package
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- Built-in G-S protection diode
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- Fast switching performance
额定电压DC 30.0 V
额定电流 1.00 A
通道数 2
针脚数 6
漏源极电阻 0.364 Ω
极性 Dual N-Channel
耗散功率 900 mW
阈值电压 1.5 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 1.00 A
上升时间 7 ns
输入电容Ciss 77pF @10VVds
额定功率Max 1.25 W
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1250 mW
安装方式 Surface Mount
引脚数 6
封装 TSOT-23-6
长度 2.9 mm
宽度 1.6 mm
高度 0.95 mm
封装 TSOT-23-6
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, 工业, Industrial, 嵌入式设计与开发, 电机驱动与控制, Alternative Energy, Embedded Design & Development, 替代能源, 电源管理, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
