










NSB 系列 50 V 100 mA 4.7 kOhm NPN 双 偏置电阻晶体管 - SC-88A
通用 NPN ,最大 1A,On Semiconductor
### 标准
带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
得捷:
TRANS 2NPN PREBIAS 0.25W SC70
欧时:
ON Semiconductor NSB1706DMW5T1G, 双 NPN 晶体管, 100 mA, Vce=50 V, HFE:80, 5引脚 SOT-353 SC-88A封装
立创商城:
NSB1706DMW5T1G
e络盟:
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
艾睿:
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP NSB1706DMW5T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual common emitter configuration.
Chip1Stop:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R
Verical:
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R
Newark:
# ON SEMICONDUCTOR NSB1706DMW5T1G Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 Ratio, SOT-353
额定电压DC 50.0 V
额定电流 100 mA
极性 NPN
耗散功率 0.385 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 385 mW
安装方式 Surface Mount
引脚数 5
封装 SC-70-5
长度 2.2 mm
宽度 1.35 mm
高度 1 mm
封装 SC-70-5
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99



| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
NSB1706DMW5T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NSB1706DMW5T1 安森美 | 类似代替 | NSB1706DMW5T1G和NSB1706DMW5T1的区别 |
RN1704 东芝 | 功能相似 | NSB1706DMW5T1G和RN1704的区别 |