NSB 系列 50 V 100 mA 47 kOhm PNP 双 偏置电阻晶体管 - SOT-563
Are you looking to build a digital signal processing device? The PNP digital transistor, developed by , can provide a solution. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC -50.0 V
额定电流 -100 mA
极性 PNP
耗散功率 0.5 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80
额定功率Max 500 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563-6
长度 1.6 mm
宽度 1.2 mm
高度 0.55 mm
封装 SOT-563-6
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NSBA114YDXV6T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NSBA114YDXV6T1 安森美 | 完全替代 | NSBA114YDXV6T1G和NSBA114YDXV6T1的区别 |
NSBA114TDXV6T1G 安森美 | 类似代替 | NSBA114YDXV6T1G和NSBA114TDXV6T1G的区别 |
NSBA114TDXV6T5 安森美 | 类似代替 | NSBA114YDXV6T1G和NSBA114TDXV6T5的区别 |