ON SEMICONDUCTOR NTS4409NT1G 场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
N 通道功率 MOSFET,25V,
欧时:
ON Semiconductor Si N沟道 MOSFET NTS4409NT1G, 700 mA, Vds=25 V, 3引脚 SOT-23封装
立创商城:
NTS4409NT1G
得捷:
MOSFET N-CH 25V 700MA SC70-3
艾睿:
Create an effective common drain amplifier using this NTS4409NT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Allied Electronics:
NTS4409NT1G N-channel MOSFET Transistor; 0.7 A; 25 V; 3-Pin SOT-23
安富利:
Trans MOSFET N-CH 25V 0.7A 3-Pin SC-70 T/R
Chip1Stop:
Trans MOSFET N-CH 25V 0.7A 3-Pin SC-70 T/R
TME:
Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SOT323
Verical:
Trans MOSFET N-CH 25V 0.7A 3-Pin SC-70 T/R
Newark:
# ON SEMICONDUCTOR NTS4409NT1G MOSFET Transistor, N Channel, 750 mA, 25 V, 350 mohm, 4.5 V, 650 mV
力源芯城:
0.75A,25V,ESD保护功率MOSFET
Win Source:
MOSFET N-CH 25V 700MA SOT-323
额定电压DC 25.0 V
额定电流 700 mA
针脚数 3
漏源极电阻 0.35 Ω
极性 N-Channel
耗散功率 330 mW
阈值电压 650 mV
输入电容 60.0 pF
栅电荷 1.50 nC
漏源极电压Vds 25 V
漏源击穿电压 25.0 V
栅源击穿电压 ±8.00 V
连续漏极电流Ids 750 mA
上升时间 8.2 ns
输入电容Ciss 60pF @10VVds
额定功率Max 280 mW
下降时间 41 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.2 mm
宽度 1.35 mm
高度 0.9 mm
封装 SC-70-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2016/06/20
ECCN代码 EAR99