ZXMHC6A07T8TA

DIODES INC.  ZXMHC6A07T8TA  双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V

The is a 60V Enhancement Mode H-bridge MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applications.

得捷:
MOSFET 2N/2P-CH 60V SM8

立创商城:
ZXMHC6A07T8TA

贸泽:
MOSFET 60V UMOS H-Bridge

艾睿:
Make an effective common source amplifier using this ZXMHC6A07T8TA power MOSFET from Diodes Zetex. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
MOSFET H-Bridge N/P-Ch 60V 1.8A/1.5A SM8

Chip1Stop:
Trans MOSFET N/P-CH 60V 1.8A/1.5A 8-Pin SM8 T/R

TME:
Transistor: N/P-MOSFET x2; unipolar; 60/-60V; 1.4/-1.2A; 1.3W

Verical:
Trans MOSFET N/P-CH 60V 1.8A/1.5A Automotive 8-Pin SM T/R

Newark:
Dual MOSFET, N and P Channel, 1.8 A, 60 V, 1.5 ohm, 10 V, 1 V

儒卓力:
**H-Br 60V 2A 1080mOhm SM-8 **

Win Source:
MOSFET 2N/2P-CH 60V SM8

DeviceMart:
MOSFET H-BRIDGE N/P-CH 60V SM8