20.6A,30V,N沟道MOSFET
表面贴装型 N 通道 8.3A(Ta),69A(Tc) 660mW(Ta),46.3W(Tc) 8-WDFN(3.3x3.3)
得捷:
MOSFET N-CH 30V 8.3A/69A 8WDFN
贸泽:
MOSFET NFET U8FL 30V 69A 7.5mOhm
e络盟:
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V
艾睿:
This NTTFS4824NTAG power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 4100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans MOSFET N-CH 30V 20.6A 8-Pin WDFN T/R
Chip1Stop:
Trans MOSFET N-CH 30V 20.6A 8-Pin WDFN EP T/R
立创商城:
N沟道 30V 69A
Verical:
Trans MOSFET N-CH 30V 14.9A 8-Pin WDFN EP T/R
Newark:
# ON SEMICONDUCTOR NTTFS4824NTAG MOSFET Transistor, N Channel, 20.6 A, 30 V, 3.7 mohm, 10 V, 1.9 V
力源芯城:
20.6A,30V,N沟道MOSFET
DeviceMart:
MOSFET N-CH 30V 8.3A 8WDFN
Win Source:
MOSFET N-CH 30V 8.3A 8WDFN
针脚数 8
漏源极电阻 0.0037 Ω
极性 N-Channel
耗散功率 4.1 W
阈值电压 1.9 V
漏源极电压Vds 30 V
连续漏极电流Ids 20.6 A, 14.9 A
上升时间 38 ns
输入电容Ciss 2363pF @12VVds
额定功率Max 660 mW
下降时间 5.5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 660mW Ta, 46.3W Tc
安装方式 Surface Mount
引脚数 8
封装 WDFN-8
长度 3.05 mm
宽度 3.05 mm
高度 0.75 mm
封装 WDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTTFS4824NTAG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTTFS4824NTWG 安森美 | 类似代替 | NTTFS4824NTAG和NTTFS4824NTWG的区别 |
TPCC8061-H 东芝 | 功能相似 | NTTFS4824NTAG和TPCC8061-H的区别 |