ON SEMICONDUCTOR NTTFS4932NTAG MOSFET Transistor, N Channel, 18 A, 30 V, 0.0025 ohm, 10 V, 1.6 V 新
表面贴装型 N 通道 30 V 11A(Ta),79A(Tc) 850mW(Ta),43W(Tc) 8-WDFN(3.3x3.3)
得捷:
MOSFET N-CH 30V 11A/79A 8WDFN
贸泽:
MOSFET 30V 79A 4 mOhm Single N-Chan u8FL
e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 18 A, 0.0025 ohm, WDFN, 表面安装
艾睿:
Make an effective common gate amplifier using this NTTFS4932NTAG power MOSFET from ON Semiconductor. Its maximum power dissipation is 4500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 30V 18A 8-Pin WDFN T/R
Chip1Stop:
Trans MOSFET N-CH 30V 18A 8-Pin WDFN EP T/R
Verical:
Trans MOSFET N-CH 30V 18A 8-Pin WDFN EP T/R
Newark:
# ON SEMICONDUCTOR NTTFS4932NTAG MOSFET, N-CH, 30V, 18A, WDFN-8
力源芯城:
79A,30V,N沟道MOSFET
DeviceMart:
MOSFET N-CH 30V 11A 8WDFN
通道数 1
针脚数 8
漏源极电阻 0.0025 Ω
极性 N-Channel
耗散功率 2.2 W
阈值电压 1.6 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 18A
上升时间 22.6 ns
输入电容Ciss 3111pF @15VVds
额定功率Max 850 mW
下降时间 4.8 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 850mW Ta, 43W Tc
安装方式 Surface Mount
引脚数 8
封装 WDFN-8
封装 WDFN-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2016/06/20
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
NTTFS4932NTAG ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NTTFS4932NTWG 安森美 | 类似代替 | NTTFS4932NTAG和NTTFS4932NTWG的区别 |