Trans GP BJT NPN 50V 0.1A 0.25W1/4W Automotive 3Pin DFN T/R
Implement this versatile PNP GP BJT from Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
频率 100 MHz
极性 PNP
耗散功率 250 mW
增益频宽积 100 MHz
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 120 @1mA, 6V
最大电流放大倍数hFE 120 @1mA, 6V
额定功率Max 250 mW
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 250 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
长度 1 mm
宽度 0.6 mm
高度 0.47 mm
封装 DFN-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
2DC4617QLP-7 Diodes 美台 | 当前型号 | 当前型号 |
2PC4617QMB,315 安世 | 功能相似 | 2DC4617QLP-7和2PC4617QMB,315的区别 |