NSS 系列 20 V 2 A 表面贴装 低 Vce NPN 晶体管 - SOT-23
Look no further than "s NPN general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
频率 150 MHz
无卤素状态 Halogen Free
针脚数 3
极性 NPN
耗散功率 540 mW
击穿电压集电极-发射极 20 V
集电极最大允许电流 2A
最小电流放大倍数hFE 200 @500mA, 2V
额定功率Max 460 mW
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 540 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 0.94 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
NSS20201LT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NSV20201LT1G 安森美 | 类似代替 | NSS20201LT1G和NSV20201LT1G的区别 |
BFS19,215 恩智浦 | 功能相似 | NSS20201LT1G和BFS19,215的区别 |