MOSFET N/P-CH 30V 4A/3A 8SOIC
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit com bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
Advanced Planar Technology
Low On-Resistance
Dual N and P Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified