ADUM3223WCRZ

ADUM3223WCRZ图片1
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ADUM3223WCRZ概述

MOSFET DRVR 4A 2Out Hi/Lo Side Non-Inv 16Pin SOIC N Tube

Product Details

The ADuM3223/ADuM4223 are 4 A isolated, half-bridge gate drivers that employ the Analog Devices, Inc.,_ i_Coupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM3223 provides 3000 V rms isolation in the narrow body, 16-lead SOIC package, and the ADuM4223 provides 5000 V rms isolation in the wide body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.

The ADuM3223/ADuM4223 isolators each provide two independent isolated channels. They operate with an input supply ranging from 3.0 V to 5.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM3223/ ADuM4223 offer the benefit of true, galvanic isolation between the input and each output. Each output may be continuously operated up to 537 V peak relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side may be as high as 800 V peak.

As a result, the ADuM3223/ADuM4223 provide reliable control over the switching characteristics of IGBT/MOSFET configurations over a wide range of positive or negative switching voltages.

**Applications**

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Switching power supplies
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Isolated IGBT/MOSFET gate drives
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Industrial inverters
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Automotive

### Features and Benefits

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4 A peak output current
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Working voltage
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High-side or low-side relative to input: 537 V peak
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High-side to low-side differential: 800 V peak
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High frequency operation: 1 MHz maximum 
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3.3 V to 5 V CMOS input logic
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4.5 V to 18 V output drive 
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UVLO at 2.5 V VDD1
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ADuM3223A/ADuM4223A UVLO at 4.1 V VDD2
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ADuM3223B/ADuM4223B UVLO at 7.0 V VDD2
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ADuM3223C/ADuM4223C UVLO at 11.0 V VDD2
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Precise timing characteristics 
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54 ns maximum isolator and driver propagation delay
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5 ns maximum channel-to-channel matching
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CMOS input logic levels 
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High common-mode transient immunity:>25 kV/μs
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Enhanced system-level ESD performance per IEC 61000-4-x 
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High junction temperature operation: 125°C 
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Thermal shutdown protection 
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Default low output
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**Safety and regulatory approvals**
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ADuM3223 narrow-body, 16-lead SOIC 
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UL recognition per UL 1577 
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3000 V rms for 1 minute SOIC long package 
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CSA Component Acceptance Notice 5A 
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VDE certificate of conformity 
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DIN V VDE V 0884-10 VDE V 0884-10:2006-12
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VIORM = 560 V peak 
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Qualified for automotive applications
ADUM3223WCRZ中文资料参数规格
技术参数

上升/下降时间 12 ns

通道数 2

隔离电压 3000 Vrms

下降时间Max 22 ns

上升时间Max 22 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

封装参数

安装方式 Surface Mount

引脚数 16

封装 SOIC-16

外形尺寸

封装 SOIC-16

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tube

制造应用 Hybrid Electric Vehicles, Automotive

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

ADUM3223WCRZ引脚图与封装图
ADUM3223WCRZ电路图
在线购买ADUM3223WCRZ
型号: ADUM3223WCRZ
制造商: ADI 亚德诺
描述:MOSFET DRVR 4A 2Out Hi/Lo Side Non-Inv 16Pin SOIC N Tube
替代型号ADUM3223WCRZ
型号/品牌 代替类型 替代型号对比

ADUM3223WCRZ

ADI 亚德诺

当前型号

当前型号

ADUM3223WCRZ-RL7

亚德诺

完全替代

ADUM3223WCRZ和ADUM3223WCRZ-RL7的区别

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