ADG636YRUZ-REEL

模拟开关 IC 2:1 400MHz 2.2 Ohm CMOS Dual SPDT

Product Details

The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw SPDT switches. When on, each switch conducts equally well in both directions.

The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.

This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.

The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.

**Product Highlights**

1. Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range

2. Leakage current <0.25 nA maximum at 85°C

3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply

4. Automotive temperature range: −40°C to +125°C

5. Small 14-lead TSSOP package

**Applications**

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Automatic test equipment

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Data acquisition systems

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Battery-powered instruments

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Communication systems

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Sample-and-hold systems

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Remote-powered equipment

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Audio and video signal routing

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Relay replacement

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Avionics

### Features and Benefits

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1 pC Charge Injection

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±2.7 V to ±5.5 V Dual Supply

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+2.7 V to +5.5 V Single Supply

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Automotive Temperature Range:

–40°C to +125°C

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100 pA Maximum @ 25°C Leakage Currents

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85 Ω Typical On Resistance

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Rail-to-Rail Operation

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Fast Switching Times

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Typical Power Consumption <0.1 µW

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TTL/CMOS Compatible Inputs

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14-Lead TSSOP Package

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