AOT266L

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AOT266L概述

60V,140A,N沟道MOSFET

N-Channel 60V 18A Ta, 140A Tc 2.1W Ta, 268W Tc Through Hole TO-220


得捷:
MOSFET N-CH 60V 18A/140A TO220


艾睿:
This AOT266L power MOSFET from Alpha &a; Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 268000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.


TME:
Transistor: N-MOSFET; unipolar; 60V; 110A; 134W; TO220


Verical:
Trans MOSFET N-CH 60V 140A 3-Pin3+Tab TO-220 T/R


力源芯城:
60V,140A,N沟道MOSFET


Win Source:
MOSFET N-CH 60V 18A TO220


AOT266L中文资料参数规格
技术参数

额定功率 134 W

极性 N-CH

耗散功率 268 W

漏源极电压Vds 60 V

连续漏极电流Ids 140A

上升时间 20 ns

输入电容Ciss 5650pF @30VVds

额定功率Max 2.1 W

下降时间 6 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 2.1W Ta, 268W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买AOT266L
型号: AOT266L
制造商: Alpha & Omega Semiconductor 万代半导体
描述:60V,140A,N沟道MOSFET

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