ALD1103SBL

ALD1103SBL图片1
ALD1103SBL图片2
ALD1103SBL图片3
ALD1103SBL图片4
ALD1103SBL概述

SOIC N+P 10.6V

GENERAL DESCRIPTION

The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with " enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package.

FEATURES

• Thermal tracking between N-channel and P-channel pairs

• Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS

• Low input capacitance

• Low Vos -- 10mV

• High input impedance -- 1013 Ω typical

• Low input and output leakage currents

• Negative current IDS temperature coefficient

• Enhancement mode normally off

• DC current gain 109

• Matched N-channel and matched P-channel in one package

• RoHS compliant

ALD1103SBL中文资料参数规格
技术参数

通道数 4

漏源极电阻 75.0 Ω, 270 Ω

极性 N-Channel, P-Channel

耗散功率 500 mW

漏源极电压Vds 10.6 V

漏源击穿电压 ±12.0 V

栅源击穿电压 13.2 V

输入电容Ciss 10pF @5VVds

额定功率Max 500 mW

封装参数

安装方式 Surface Mount

封装 SOIC-14

外形尺寸

封装 SOIC-14

物理参数

工作温度 0℃ ~ 70℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

ALD1103SBL引脚图与封装图
ALD1103SBL引脚图
ALD1103SBL封装图
ALD1103SBL封装焊盘图
在线购买ALD1103SBL
型号: ALD1103SBL
制造商: Advanced Linear Devices 先进线性电子
描述:SOIC N+P 10.6V

锐单商城 - 一站式电子元器件采购平台